A new market research report called “Super Junction MOSFET Market by FAB Technology (Multiple-Epitaxy, Deep-Trench), Packaging Technology Material (Substrate, Transition Layer, Electrode), Application (Power Supply, Display, Lighting, EV/HEV, Industrial) & by Geography- Global Trends & Forecasts to 2013 – 2020″, sees the SJ-MOSFET market crossing $2.20 billion by 2020, growing at a high CAGR from 2013 to 2020. The report comes from MarketsandMarkets, a market research and consulting company in Dallas.
Super-junction MOSFETs get their name from the super junction charge-balance principle. They heavily dope the thick drift region of a power MOSFET, often with a deep-trench technique, to reduce the electrical resistance to electron flow without reducing the breakdown voltage. Another region that is similarly doped with the opposite carrier polarity (holes) sits close by. The two oppositely doped regions effectively develop a depleted region that supports the high voltage during the off-state. When the MOSFET conducts during the on-state, the higher doping of the drift region lets carriers flow easily, thereby reducing on-resistance. Commercial super-junction devices have been developed by companies that include Infineon, International Rectifier, and STM.
MarketsandMarkets says that SJ-MOSFETs are one of the major power device technologies being used in automotive systems including EVs and hybrid EVs. The firm expects the rising market for EV/HEV vehicles to exponentially boost the SJ-MOSFET market. In automotive system, SJ-MOSFET’s find use in engine control, ignition control, electronic fuel injection, motor and generators, electronic transmission control, traction control, antilock breaking, electronic suspensions, power steering, power windows, and a variety of other areas.
For perspective, the $2.20 billion market for SJ-MOSFETs that the firm predicts by 2020 would be roughly equal to the total market for dating services in the U.S. today and roughly half the size of the U.S. market for laundromats.
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